FDW2508PB mosfet equivalent, dual p-channel mosfet.
General Description
This P-Channel
–1.8V specified MOSFET uses Fairchild Semiconductor’s advanced low voltage PowerTrench®. It has been optimized for batt.
* Max rDS(on) = 18mΩ at VGS =
–4.5V, ID =
–6A
* Max rDS(on) = 22mΩ at VGS =
This P-Channel
–1.8V specified MOSFET uses Fairchild Semiconductor’s advanced low voltage PowerTrench®. It has been optimized for battery power management applications.
* Max rDS(on) = 18mΩ at VGS =
–4.5V, ID =
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